PART |
Description |
Maker |
MHV5IC2215NR2 |
2170 MHz, 23 dBm, 28 V Single N鈥揅DMA
|
MOTOROLA
|
PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
NE1101-00 |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
Rakon France SAS
|
VLB2080 |
VCO, 2080 MHz - 2170 MHz
|
TEMEX COMPONENTS
|
PD21120R6 |
120 Watts, 2110-2170 MHz PD21120R6 PUSH/PULL LATERAL MOSFET 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET
|
TRIQUINT SEMICONDUCTOR INC
|
MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET 2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
SM2122-52LD |
2110-2170 MHz 160 Watt Peak Power Amplifier
|
Stealth Microwave, Inc.
|
PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
TMJ9904 |
10 MHz - 2000 MHz RF/MICROWAVE THRESHOLD DETECTOR, 15 dBm INPUT POWER-MAX
|
SPECTRUM CONTROL INC
|
PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http:// INFINEON[Infineon Technologies AG]
|
MAPLST2122-030CF |
LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|